Active and preferred
RoHS Compliant
Lead-free

IMZA40R011M2H

CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 11 mΩ

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IMZA40R011M2H
IMZA40R011M2H

Product details

  • ID (@25°C) max
    112 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO247 4-pin
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    11 mΩ
  • Technology
    CoolSiC™ G2
  • VDS max
    400 V
OPN
IMZA40R011M2HXKSA1
Product Status active and preferred
Infineon Package
Package Name TO247 4-pin (asymmetric leads)
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name TO247 4-pin (asymmetric leads)
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Features

  • 440 V blocking voltage
  • Lower FOMs compared to 650 V SiC MOSFETs
  • Fast commutation proof low Qfr body diode
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • Highly controllable
  • Low Voff overshoot during high dV/dt operation
  • .XT interconnection technology

Benefits

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies

Applications

Documents

Design resources

Developer community

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