Active and preferred
RoHS Compliant
Lead-free

IMYH200R050M1H

CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
ea.
in stock

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IMYH200R050M1H
IMYH200R050M1H
ea.

Product details

  • Ciss
    2425 pF
  • Coss
    81 pF
  • ID (@25°C) max
    48 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-TO247-4-PLUS-NT14
  • Pin Count
    4 Pins
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    348 W
  • Qgd
    11.1 nC
  • QG
    82 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    50 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.43 K/W
  • Technology
    CoolSiC™ G1
  • Tj max
    175 °C
  • VDS max
    2000 V
OPN
IMYH200R050M1HXKSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

Features

  • VDSS = 2000 V for high DC-link
  • Up to 1500 VDC
  • Very Low switching losses
  • Benchmark gate threshold voltage
  • VGS(th) = 4.5 V
  • Robust diode for hard commutation
  • .XT interconnection technology
  • Improved humidity robustness
  • Innovative HCC package with
  • 14 mm creepage distances
  • 5.5 mm clearance distances

Documents

Design resources

Developer community

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