Active and preferred
RoHS Compliant
Lead-free

IMWH170R650M1

CoolSiC™ MOSFET discrete 1700 V, 650 mΩ G1 in TO247-3-HCC package
Data Sheet
package
ea.
in stock

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IMWH170R650M1
IMWH170R650M1
ea.
Data Sheet

Product details

  • Ciss
    337 pF
  • Coss
    15 pF
  • ID (@ TC=25°C)
    7.5 A
  • Package
    TO-247 HCC
  • Pin Count
    3 Pins
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    650 mΩ
  • RthJA max
    62 K/W
  • RthJC
    1.69 K/W
  • Technology
    CoolSiC™ G1
  • VDS max
    1700 V
Recommended
OPN
IMWH170R650M1XKSA1
Product Status active and preferred
Infineon Package
PG-TO247-3
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller, no need for a Gate driver IC, .XT interconnect technology for excellent thermal performance, and a high creepage clearance package for increased reliability.

Features

  • Optimized for fly-back topologies
  • Extremely low switching loss
  • 12 V / 0 V gate-source voltage
  • Compatible with fly-back controllers
  • Gate threshold voltage, VGS(th) = 4.5 V
  • .XT interconnection technology
  • High creepage clearance package

Benefits

  • High efficiency for aux. power supplies
  • Better thermal performance & resistance
  • TO247 package for easy isolation design
  • No gate driver needed
  • Reduced system complexity
  • Higher power density
  • Robustness against harsh environment

Documents

Documents

Design resources

Partner solutions

Developer community

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