not for new design
RoHS Compliant
Lead-free

IMW65R083M1H

CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package
Data Sheet
package
ea.
in stock

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IMW65R083M1H
IMW65R083M1H
ea.
Data Sheet

Product details

  • ID (@25°C) max
    59 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO247
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    83 mΩ
  • Technology
    CoolSiC™ G1
  • VDS max
    650 V
OPN
IMW65R083M1HXKSA1
Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R083M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Benefits

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability

Documents

Documents

Design resources

Partner solutions

Developer community

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