Active and preferred
RoHS Compliant
Lead-free

IMTA65R060M2H

CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package
ea.
in stock

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IMTA65R060M2H
IMTA65R060M2H
ea.

Product details

  • ID (@25°C) max
    37 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    Thin-TOLL
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    60 mΩ
  • RthJC max
    0.91 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    650 V
OPN
IMTA65R060M2HXTMA1
Product Status active and preferred
Infineon Package
Package Name Thin-TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name Thin-TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a  performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance.  It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. 

Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS(off)=0)
  • Pin to pin compatible with all 8x8 FETs
  • Improved package interconnect with .XT
  • 4x improvement in TCoB

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design

Documents

Design resources

Developer community

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