Active and preferred
RoHS Compliant
Lead-free

IMT65R010M2H

CoolSiC™ MOSFET 650 V G2 in TOLL package, 10 mΩ
Data Sheet
package
board
ea.
in stock

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IMT65R010M2H
IMT65R010M2H
ea.
Data Sheet

Product details

  • ID (@25°C) max
    168 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TOLL
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    10 mΩ
  • RthJC max
    0.22 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    650 V
Recommended
OPN
IMT65R010M2HXUMA1
Product Status active and preferred
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Features

  • Excellent figures-of-merit (FOMs)
  • Best in class RDS(on)
  • Outstanding robustness
  • Flexible driving voltage range
  • Pin-to-pin compatible with all 8x8 FETs
  • Improved package interconnect with .XT
  • Tj,max=175°C
  • 12k-cycle in TCoB

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design
  • Fully leverages SiC in a small footprint

Documents

Documents

Design resources

Partner solutions

Developer community

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