Active and preferred
RoHS Compliant
Lead-free

IKW50N65RH5

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
ea.
in stock

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IKW50N65RH5
IKW50N65RH5
ea.

Product details

  • Eoff (Hard Switching)
    0.18 mJ
  • Eon
    0.23 mJ
  • IC (@ 100°) max
    56 A
  • IC (@ 25°) max
    80 A
  • ICpuls max
    200 A
  • IF max
    22.8 A
  • IFpuls max
    75 A
  • Package
    TO-247-3
  • Ptot max
    305 W
  • QGate
    120 nC
  • RGint
    0 Ω
  • RG
    12 Ω
  • Switching Frequency
    40 kHz to 100 kHz
  • td(off)
    180 ns
  • td(on)
    22 ns
  • Technology
    IGBT TRENCHSTOP™ 5, Silicon Carbide Schottky Diode
  • tf
    18 ns
  • tr
    7 ns
  • VCE(sat)
    1.65 V
  • VCE max
    650 V
  • VF
    1.35 V
OPN
IKW50N65RH5XKSA1
Product Status active and preferred
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

Features

  • Ultra-Low switching losses
  • TRENCHSTOP™ 5 IGBT
  • CoolSiC™ diode
  • Very low on-state losses
  • Benchmark switching efficiency*
  • *in hard switching topologies
  • Pb-free plating: RoHS compliant
  • Qualified acc. to JEDEC 47/20/22

Documents

Design resources

Developer community

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