Active
RoHS Compliant
Lead-free

IKW20N60T

600 V, 20 A IGBT discrete with anti-parallel diode in TO-247 package
ea.
in stock

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IKW20N60T
IKW20N60T
ea.

Product details

  • Eoff (Hard Switching)
    0.46 mJ
  • Eon
    0.31 mJ
  • IC (@ 25° ) max
    41 A
  • IC (@ 100°) max
    28 A
  • ICpuls max
    60 A
  • IF max
    40 A
  • IFpuls max
    60 A
  • Irrm
    13.3 A
  • Package
    TO-247-3
  • Ptot max
    166 W
  • QGate
    120 nC
  • Qrr
    310 nC
  • RGint
    0 Ω
  • RG
    12 Ω
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    199 ns
  • td(on)
    18 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    42 ns
  • tr
    14 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
  • VF
    1.65 V
OPN
IKW20N60TFKSA1
Product Status active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 600 V, 20 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft, fast recovery diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Documents

Design resources

Developer community

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