Active and preferred
RoHS Compliant
Lead-free

IKA15N60T

600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
Data Sheet
package
ea.
in stock

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IKA15N60T
IKA15N60T
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.35 mJ
  • Eon
    0.22 mJ
  • IC (@ 100°) max
    8.9 A
  • IC (@ 25° ) max
    14.7 A
  • ICpuls max
    45 A
  • IF max
    15.5 A
  • IFpuls max
    45 A
  • Irrm
    10.4 A
  • Package
    TO-220-3
  • Ptot max
    35.7 W
  • QGate
    87 nC
  • Qrr
    240 nC
  • RGint
    0 Ω
  • RG
    15 Ω
  • Soft Switching
    No
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    188 ns
  • td(on)
    17 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    50 ns
  • tr
    11 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
  • VF
    1.65 V
Recommended
OPN
IKA15N60TXKSA1
Product Status active and preferred
Infineon Package
PG-TO220-3
Package Name FullPAK
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO220-3
Package Name FullPAK
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Very Low VCEsat 1.5 V (typ.)
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft anti-parallel diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency
  • Comprehensive portfolio
  • High device reliability
  • low conduction and switching losses

Documents

Documents

Design resources

Partner solutions

Developer community

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