Active and preferred
RoHS Compliant
Lead-free

IGW75N60T

600 V, 75 A IGBT Discrete in TO-247 package
ea.
in stock

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IGW75N60T
IGW75N60T
ea.

Product details

  • Eoff (Hard Switching)
    2.5 mJ
  • Eon
    2 mJ
  • IC (@ 100°) max
    75 A
  • IC (@ 25°) max
    150 A
  • ICpuls max
    225 A
  • Package
    TO-247
  • Ptot max
    428 W
  • QGate
    470 nC
  • RGint
    0 Ω
  • RG
    5 Ω
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    330 ns
  • td(on)
    33 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    35 ns
  • tr
    36 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
OPN
IGW75N60TFKSA1
Product Status active and preferred
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very softrolled Diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency
  • Comprehensive portfolio
  • High device reliability
  • low conduction and switching losses

Documents

Design resources

Developer community

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