Active and preferred
RoHS Compliant

IGLT65R055B2

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IGLT65R055B2
IGLT65R055B2

Product details

  • Family
    CoolGaN™ BDS 650 V G5
  • Green
    RoHS compliant, Halogen free
  • ISS puls (@25°C) max
    73.6 A
  • Package
    PG-HDSOP-16
  • Planned to be available until at least
    2035
  • QG
    5.4 nC
  • RDS (on)
    55 mΩ
  • VDS max
    650 V
OPN
IGLT65R055B2AUMA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 1800
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name -
Packing Size 1800
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.

Features

  • 650 V bidirectional e-mode transistor
  • Common-drain configuration
  • Bidirectional blocking capability
  • Low gate charge, low output charge
  • Integrated substrate voltage control
  • Qualfied according to JEDEC
  • Stable RSS(on) across temp. and freq.
  • Replacement of back-to-back switches

Benefits

  • Compact design
  • Cost effective
  • Low conduction loss
  • Simplified design
  • Short time-to-market

Documents

Design resources

Developer community

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