Active and preferred
RoHS Compliant
Lead-free

IGI65D1414A3MS

Two 140 mΩ / 650 V GaN tranistors in half-bridge configuration
Data Sheet
package
board
ea.
in stock

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IGI65D1414A3MS
IGI65D1414A3MS
ea.
Data Sheet

Product details

  • Family
    CoolGaN™ Transistor Dual 650 V G5
  • Green
    RoHS compliant, Halogen free
  • Package
    QFN-32
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
  • RDS (on) (typ)
    140 mΩ
  • VDS max
    650 V
Recommended
OPN
IGI65D1414A3MSXUMA1
Product Status active and preferred
Infineon Package
PG-TIQFN-32
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TIQFN-32
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package. This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.

Features

  • Ultra-fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge
  • Low output charge
  • Kelvin source connection

Benefits

  • 2x reduced component count vs. discrete
  • Reduced cost
  • Reduced weight
  • Reduced system complexity

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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