on request
RoHS Compliant
Lead-free

IGB110S10S1Q

CoolGaN™ Automotive Transistor 100 V G1 in PQFN 3x3, 11 mΩ

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IGB110S10S1Q
IGB110S10S1Q

Product details

  • Green
    RoHS compliant, Halogen free
  • ID (@25°C) max
    23 A
  • IDpuls (@25°C) max
    210 A
  • QG
    3.4 nC
  • Qualification
    Automotive
  • RDS (on) (typ)
    9.4 mΩ
  • VDS max
    100 V
OPN
IGB110S10S1QXTMA1
Product Status on request
Infineon Package
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status on request
Infineon Package
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The IGB110S10S1Q is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. The device is qualified according to the AEC-Q101 standard and thanks to its low on-state resistance, it is the ideal choice for reliable performance in a broad range of automotive applications.

Features

  • AEC-Q101 qualified
  • 100 V e-mode power transistor
  • Dual-side cooled package
  • No reverse recovery charge
  • Ultra-low figures of merit

Benefits

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost

Documents

Design resources

Developer community

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