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IG1NT052N10R

Rad hard, 100 V, 52 A, GaN transistor in PowIR-SMD package – PowIR-SMD, 100 krad TID, COTS
Data Sheet

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IG1NT052N10R
IG1NT052N10R
Data Sheet

Product details

  • ESD Class
    Class 1C
  • Generation
    Gen 1
  • ID (@25°C) max
    52 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    PowIR-SMD
  • Polarity
    N
  • QG
    13 nC
  • QPL Part Number
    2N7697
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    6 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    3.9 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • Single event effect (SEE) hardened up to LET (GAN)1 = 70 MeV.cm2 / mg (Au ion)
  • Ultra low RDS(on)
  • Low total gate charge
  • Zero reverse recovery charge
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • ESD rating: class 1C per MIL-STD-750, Method 1020

Benefits

  • Isolated DC-DC converter
  • Motor drives
  • Synchronous rectification
  • Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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