Active and preferred
RoHS Compliant
Lead-free

IDWD80G200C5

CoolSiC™ Schottky diode 2000 V in TO-247-2 package
Data Sheet
package
ea.
in stock

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IDWD80G200C5
IDWD80G200C5
ea.
Data Sheet

Product details

  • I(FSM) max
    463 A
  • IF max
    80 A
  • IR
    40 µA
  • Package
    PG-TO247-2
  • Ptot max
    656 W
  • QC
    716 nC
  • Qualification
    Industrial
  • RthJC
    0.1 K/W
  • VF
    1.5 V
Recommended
OPN
IDWD80G200C5XKSA1
Product Status active and preferred
Infineon Package
PG-TO247-2
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-2
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CoolSiC™ Schottky diode 2000 V, 80 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

Features

  • VRRM = 2000 V
  • IF = 80 A
  • VF = 1.5 V
  • No reverse recovery current
  • No forward recovery
  • High surge current capability
  • Low forward voltage
  • Tight forward voltage distribution
  • Specified dv/dt ruggedness
  • .XT interconnection technology

Benefits

  • High power density
  • Matching MOSFET available
  • Topology simplification

Documents

Documents

Design resources

Partner solutions

Developer community

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