not for new design
RoHS Compliant
Lead-free

IDWD15G120C5

1200 V Silicion Carbide Schottky diode in TO-247-2 package
Data Sheet
Multiple OPNs available
ea.

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IDWD15G120C5
IDWD15G120C5
ea.
Data Sheet

Product details

  • I(FSM) max
    170 A
  • IF max
    15 A
  • IR
    8 A
  • Package
    PG-TO247-2
  • Ptot max
    200 W
  • QC
    82 nC
  • Qualification
    Industrial
  • RthJC
    0.6 K/W
  • VF
    1.4 V
OPN
IDWD15G120C5XKSA1 IDWD15G120C5XKSA2
Product Status not for new design not for new design
Infineon Package PG-TO247-2 PG-TO247-2
Package Name N/A N/A
Packing Size 240 240
Packing Type TUBE TUBE
Moisture Level NA N/A
Moisture Packing NON DRY NON DRY
Lead-free Yes Yes
Halogen Free Yes Yes
RoHS Compliant Yes Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package PG-TO247-2
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock

Product Status not for new design
Infineon Package PG-TO247-2
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
CoolSiC™ Schottky diode 1200 V, 15 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more.

Features

  • No reverse recovery current
  • No forward recovery voltage
  • Temp.-independ. switching behavior
  • Low forward voltage*
  • *even at high operating temperature
  • Tight forward voltage distribution
  • High surge current capability

Documents

Documents

Design resources

Partner solutions

Developer community

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