Active
RoHS Compliant
Lead-free

IDW80C65D2

650 V IGBT silicon power diode in TO-247 package
Data Sheet
package
ea.
in stock

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IDW80C65D2
IDW80C65D2
ea.
Data Sheet

Product details

  • Configuration
    Common Cathode
  • I(FSM) max
    250 A
  • IF
    40 A
  • IR max
    40 µA
  • Irrm
    3.6 A
  • Mounting
    THT
  • Operating Temperature
    -40 °C to 175 °C
  • Package
    TO-247
  • Ptot max
    180 W
  • Qrr
    0.18 µC
  • RthJC max
    0.84 K/W
  • trr
    68 ns
  • VF
    1.6 V
  • Voltage Class max
    650 V
Recommended
OPN
IDW80C65D2XKSA1
Product Status active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Rapid 2 switching 650 V, 80 A emitter controlled power silicon diodes in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

Features

  • 1.35 V temperature-stable VF
  • Highest softness-factor for:
  • Highest softness-factor for:
  • Low EMI filtering
  • For 18 kHz to 40 kHz applications
  • Lowest Irrmfor:
  • Lowest losses on boost switch
  • Low thermal resistance

Documents

Documents

Design resources

Partner solutions

Developer community

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