Active and preferred
RoHS Compliant
Lead-free

IDW10G120C5B

1200 V Silicion Carbide Schottky diode in TO-247-3 package
Data Sheet
package
board
Multiple OPNs available
ea.

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IDW10G120C5B
IDW10G120C5B
ea.
Data Sheet

Product details

  • I(FSM) max
    140 A
  • IF max
    10 A
  • IR
    6 µA
  • Package
    PG-TO247-3
  • Ptot max
    148 W
  • QC
    57 nC
  • Qualification
    Industrial
  • RthJC
    0.8 K/W
  • VF
    1.4 V
Recommended
OPN
IDW10G120C5BFKSA1 IDW10G120C5BXKSA1
Product Status active and preferred active and preferred
Infineon Package
PG-TO247-3
PG-TO247-3
Package Name TO247 TO247
Packing Size 240 240
Packing Type TUBE TUBE
Moisture Level NA N/A
Moisture Packing NON DRY NON DRY
Lead-free Yes Yes
Halogen Free No Yes
RoHS Compliant Yes Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temp. depend. of VF
  • Best-in-class surge current capab.
  • Excellent thermal performance

Documents

Documents

Design resources

Partner solutions

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