Active and preferred
RoHS Compliant
Lead-free

IDFW60C65D1

650 V silicon power diode in TO-247 advanced isolation package
Data Sheet
package

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IDFW60C65D1
IDFW60C65D1
Data Sheet

Product details

  • Configuration
    Common Cathode
  • I(FSM) max
    240 A
  • IF
    60 A
  • IR max
    40 µA
  • Irrm
    17.6 A
  • Mounting
    THT
  • Operating Temperature
    -40 °C to 175 °C
  • Package
    TO-247
  • Ptot max
    100 W
  • Qrr
    0.76 µC
  • RthJC max
    1.5 K/W
  • trr
    112 ns
  • VF
    1.45 V
  • Voltage Class max
    650 V
Recommended
OPN
IDFW60C65D1XKSA1
Product Status active and preferred
Infineon Package
PG-HSIP247-3
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HSIP247-3
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Rapid 1 switching 650 V, 60 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Features

  • 650V emitter controlled technology
  • Temperature stable behaviour
  • Low forward voltage (VF)
  • Low reverse recovery charge (Qrr)
  • Low reverse recovery current (Irrm)
  • 2500 VRMSelectrical isolation
  • 100% tested isolated mounted surface
  • Pb-free plating: RoHS compliant

Benefits

  • Easy paralleling
  • No need of isolation/thermal grease
  • Reduction in assembling time
  • eliminated faults of isolation foil
  • Up to 10°C lower Tc
  • Up to 20% Iout increase
  • Manufacturing process control

Diagrams

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