NEW
Active and preferred
RoHS Compliant
Lead-free

IDC52D75H8A

NEW
Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology
Data Sheet

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IDC52D75H8A
IDC52D75H8A
Data Sheet

Product details

  • IFn
    320 A
  • Tvj [°C]
    -40 to 185
  • VF (Tvj=185°C @200A)
    1.45 V
  • VRRM
    750 V
Recommended
OPN
IDC52D75H8AX7SA1
Product Status active and preferred
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type HORIZONTAL FRAME SHIPPER
Moisture Level N/A
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type HORIZONTAL FRAME SHIPPER
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.

Features

  • Best-in-class current density
  • Suitable for 470 V VDC systems
  • Maximum junction temperature of 185 °C
  • High switching speed
  • Very low switching losses
  • Very tight parameter distribution
  • Product validation acc. to AEC-Q101

Benefits

  • Ideal for automotive requirements
  • Available in 750 V and 1200 V class
  • Customized development (on demand)
  • Decreased losses and increased max. Tvj
  • Cost benefit due to module shrink
  • Low costs per Ampere on system level
  • Less parallelization effort and costs
  • High reliability and quality
  • Drop-in replacement

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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