NEW
Active and preferred
RoHS Compliant

IAUZN10S7N078

NEW
100 V, N-Ch, 7.8 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7
Data Sheet
package
ea.
in stock

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IAUZN10S7N078
IAUZN10S7N078
ea.
Data Sheet

Product details

  • ID (@25°C) max
    60 A
  • Launch year
    2025
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-TSDSON-8
  • Planned to be available until at least
    2040
  • Polarity
    N
  • QG (typ @10V)
    22.2 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    7.8 mΩ
  • Technology
    OptiMOS™-7
  • VDS max
    100 V
  • VGS(th)
    2.8 V
Recommended
OPN
IAUZN10S7N078ATMA1
Product Status active and preferred
Infineon Package
PG-TSDSON-8
Package Name S3O8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSDSON-8
Package Name S3O8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IAUZN10S7N078 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Features

  • Industry’s best on-resistance, RDS(on)
  • Fast switching times (turn on/off)
  • ID current 50% better than prior gen.
  • Tight threshold voltage, VGS(th), range
  • Small 3x3mm2 SMD package
  • High avalanche current capability
  • High SOA ruggedness
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Benefits

  • Minimized conduction losses
  • Superior switching performance
  • Small footprint; could save PCB area
  • Helps achieve high power density
  • Well-suited for parallel placement
  • Quality and robustness for automotive
  • Potential for second source supplier

Documents

Documents

Design resources

Partner solutions

Developer community

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