NEW
Active and preferred
RoHS Compliant

IAUTN15S6N038

NEW
150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™ 6
Data Sheet
package
ea.
in stock

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IAUTN15S6N038
IAUTN15S6N038
ea.
Data Sheet

Product details

  • ID (@25°C) max
    170 A
  • IDpuls max
    601 A
  • Launch year
    2025
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TOLL (PG-HSOF-8-1)
  • Polarity
    N
  • QG (typ @10V)
    67 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    3.8 mΩ
  • RthJC max
    0.57 K/W
  • Technology
    OptiMOS™-6
  • VDS max
    150 V
  • VGS(th)
    3.5 V
Recommended
OPN
IAUTN15S6N038ATMA1
Product Status active and preferred
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IAUTN15S6N038 is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLL 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

Features

  • Breakdown voltage of 150V
  • Low RDS(on) → lowest conduction losses
  • N-ch.-Enhancement mode-Normal Level
  • Tight distribution of VGS(th)
  • 175°C operating temperature
  • High avalanche capability

Benefits

  • High power density
  • By far industry’s lowest RDS(on)
  • High ID for high-power applications
  • High switching performance

Documents

Documents

Design resources

Partner solutions

Developer community

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