IAUTN08S7N007
NEW
Active and preferred
RoHS Compliant

IAUTN08S7N007

NEW
80 V, N-Ch, 0.64 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™7
Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IAUTN08S7N007
IAUTN08S7N007
ea.
Data Sheet

Product details

  • ID (@25°C) max
    350 A
  • Launch year
    2026
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PG-HSOF-8
  • Planned to be available until at least
    2040
  • Polarity
    N
  • QG (typ @10V)
    195 nC
  • QG (typ @10V) max
    254 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    0.64 mΩ
  • Technology
    OptiMOS™7
  • VDS max
    80 V
  • VGS(th) range
    2.3 V to 3.2 V
  • VGS(th)
    2.8 V
Recommended
OPN
IAUTN08S7N007ATMA1
Product Status active and preferred
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IAUTN08S7N007 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™7 80 V. This product is offered in the TOLL 10x12 mm² power package, which Infineon first introduced to the market. It is designed, qualified and manufactured specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Features

  • Extremely low on-resistance, RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • High power, high current TOLL package
  • Low package resistance and inductance
  • Excellent thermal performance
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Benefits

  • Extremely low conduction losses
  • Superior switching performance
  • Higher power density
  • Higher efficiency
  • Increased design ruggedness
  • Well-suited for parallel placement
  • Could reduce MOSFET part count on BOM
  • Quality and robustness for automotive
  • Potential for second source supplier
Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }