Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

GS66504B-TR

END OF LIFE
CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

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GS66504B-TR
GS66504B-TR

Product details

  • Green
    RoHS compliant, Halogen free
  • ID (@25°C) max
    15 A
  • IDpuls (@25°C) max
    30 A
  • Package
    GaNPX
  • QG
    3.3 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    100 mΩ
  • VDS max
    650 V
OPN
GS66504BTRXUMA1
Product Status discontinued
Infineon Package
Package Name GaNPX (R)
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name GaNPX (R)
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The GS66504B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66504B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled
  • Zero reverse recovery loss
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Benefits

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings

Documents

Design resources

Developer community

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