Active and preferred
RoHS Compliant
Lead-free

FM28V202A-TG

Data Sheet
package
ea.
in stock

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FM28V202A-TG
FM28V202A-TG
ea.
Data Sheet

Product details

  • Density
    2 MBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    NiPdAuAg
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Organization (X x Y)
    128Kb x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    60 ns
Recommended
OPN
FM28V202A-TG
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM28V202A-TG is a 2-Mbit (128 K × 16) parallel F-RAM with nonvolatile storage, 151-year retention at 65°C, and 100 trillion cycle endurance. It operates from 2.0 V to 3.6 V with 60-ns access time and low power consumption. Compatible with standard 128 K × 16 SRAM pinout, it supports page mode, software block write-protect, and sleep mode. The 44-pin TSOP II package is ideal for industrial applications needing frequent, rapid writes and high reliability.

Features

  • 2-Mbit F-RAM, 128 K × 16 organization
  • Configurable as 256 K × 8
  • 100 trillion read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ writes, SRAM-compatible
  • 60-ns access, 90-ns cycle time
  • Page mode operation to 30-ns cycle
  • Software-programmable block write-protect
  • Active current 7 mA (typ), standby 120 μA
  • Sleep mode current 3 μA (typ)
  • VDD 2.0 V to 3.6 V operation
  • 16-bit data bus, industry-standard pinout

Benefits

  • Reliable nonvolatile storage, no battery
  • Drop-in SRAM replacement simplifies design
  • Virtually unlimited write cycles
  • Retains data for decades without power
  • Fast writes eliminate wait states
  • Low power extends battery/system life
  • Page mode boosts throughput
  • Flexible configuration for varied systems
  • Write-protect enhances data security
  • Sleep mode minimizes standby drain
  • Wide VDD supports diverse platforms
  • Standard pinout eases PCB integration

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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