FM25V20A-DGQ
Active and preferred
RoHS Compliant
Lead-free

FM25V20A-DGQ

Datasheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

FM25V20A-DGQ
FM25V20A-DGQ
Datasheet


Product details

  • Density
    2 MBit
  • Frequency
    33 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 105 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    256Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns

Recommended
OPN
FM25V20A-DGQ
Product Status active and preferred
Infineon Package
PG-USON-8
Package Name DFN-8 (001-85579)
Packing Size 370
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-USON-8
Package Name DFN-8 (001-85579)
Packing Size 370
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
The FM25V20A-DGQ is a 2-Mbit (256 K x 8) serial F-RAM memory with extended temperature capability, supporting 10 trillion (10^14) read/write cycles and 121-year data retention at 85°C. Operating from 2.0 V to 3.6 V, it delivers NoDelay™ writes at SPI speeds up to 33 MHz in modes 0 and 3.

Features

  • 2-Mbit F-RAM, 256 K x 8 organization
  • 10^14 read/write cycle endurance
  • 121-year data retention at 85°C
  • NoDelay™ real-time write operation
  • Up to 33 MHz SPI interface
  • Low power: 3.0 mA active, 12 µA sleep
  • VDD operation: 2.0 V to 3.6 V
  • Extended temp: –40°C to +105°C
  • Multi-tiered hardware/software write
  • Fast sequential write/read at bus speed
  • Direct drop-in for serial flash/EEPROM
  • Device ID with manufacturer and product info

Benefits

  • Reliable for frequent, rapid data logging
  • Eliminates write delays for instant storage
  • No wear-out issues in high-write apps
  • Data secure for decades, even at high temp
  • Fast SPI boosts system throughput
  • Minimizes energy use in active/sleep modes
  • Flexible for 2.0–3.6 V system designs
  • Operates in harsh industrial environments
  • Protects data from accidental overwrites
  • Simplifies migration from flash/EEPROM
  • Enables robust device authentication
  • Supports long-life, maintenance-free systems
Documents

Design resources

Partner solutions

Developer community