Active and preferred
RoHS Compliant
Lead-free

FM25V01A-G

Data Sheet
package
ea.
in stock

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FM25V01A-G
FM25V01A-G
ea.
Data Sheet

Product details

  • Density
    128 kBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Organization (X x Y)
    16Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25V01A-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 970
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 970
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25V01A-G is a 128-Kbit (16K × 8) serial ferroelectric RAM (F-RAM) with a high-speed SPI interface up to 40 MHz. It delivers 100 trillion (1e14) read/write cycles, 151-year data retention, and NoDelay™ writes for instant updates. Operating from 2.0 V to 3.6 V and -40°C to +85°C, it features low active (2.5 mA), standby (150 μA), and sleep (8 μA) currents.

Features

  • 128-Kbit nonvolatile F-RAM, 16K × 8
  • 100 trillion (10^14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, instant data storage
  • Up to 40 MHz SPI bus operation
  • Supports SPI modes 0 and 3
  • Hardware and software write protection
  • 2.5 mA active, 150 μA standby, 8 μA sleep
  • Low-voltage operation: 2.0 V to 3.6 V
  • Industrial temperature: –40°C to +85°C
  • Unique Device ID for identification
  • Fast read/write at bus speed, no polling

Benefits

  • Enables frequent, reliable data logging
  • Prevents data loss with instant writes
  • Simplifies design as drop-in EEPROM/flash
  • Reduces power use in active and standby modes
  • Operates in low-voltage, battery-powered
  • Reliable in harsh industrial environments
  • Protects data with multiple write-protect
  • Fast SPI enhances system throughput
  • No wear-out issues like flash/EEPROM
  • Easy device tracking with unique ID
  • No write delays, supports real-time systems
  • Long retention reduces maintenance needs

Documents

Documents

Design resources

Partner solutions

Developer community

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