Active and preferred
RoHS Compliant
Lead-free

FM25L16B-G

High-Density 16 Kbit SPI F-RAM for Industrial Applications with Wide Operating Range
Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

FM25L16B-G
FM25L16B-G
ea.
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage (VCCQ)
    2.7 V to 3.6 V
  • Operating Voltage
    2.7 V to 3.6 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25L16B-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 1940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 1940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25L16B-G is a 16 Kbit nonvolatile memory employing advanced ferroelectric technology, offering reliable data retention for 151 years and rapid write operations at bus speed. With substantial write endurance and high-speed SPI bus compatibility, it is an ideal solution for various nonvolatile memory applications, from data collection to demanding industrial controls, where the long write time of other memories can cause data loss. Its guaranteed performance over an industrial temperature range makes it a versatile and reliable choice for critical applications.

Features

  • 16 Kbit F-RAM logically organized as 2K × 8 
  • High-endurance 100 trillion (1014) read/writes 
  • 151-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Up to 20 MHz frequency
  • Sophisticated write protection scheme
  • Low power consumption
  • Low-voltage operation: VDD = 2.7 V to 3.6 V
  • Industrial temperature: –40°C to +85°C

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }