Active and preferred
RoHS Compliant
Lead-free

FM25L04B-GTR

Data Sheet
package
ea.
in stock

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FM25L04B-GTR
FM25L04B-GTR
ea.
Data Sheet

Product details

  • Density
    4 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    0.5Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25L04B-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25L04B-GTR is a 4-Kbit (512 × 8) serial F-RAM offering high-endurance nonvolatile memory with 100 trillion read/write cycles and 151-year data retention at 65°C. Operating from 2.7 V to 3.6 V across -40°C to +85°C, it supports SPI bus speeds up to 20 MHz and features hardware and software write protection. Low power consumption and fast NoDelay™ writes make it ideal for frequent, rapid data storage in industrial controls. Available in 8-pin SOIC package, RoHS compliant.

Features

  • 4-Kbit F-RAM organized as 512 × 8
  • 100 trillion (10^14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, writes at bus speed
  • Up to 20 MHz SPI interface
  • Hardware and software write protection
  • 200 μA active current at 1 MHz
  • 3 μA typical standby current
  • VDD operation from 2.7 V to 3.6 V
  • Industrial temp range: –40°C to +85°C
  • Direct hardware replacement for EEPROM/flash
  • Supports SPI mode 0 and mode 3

Benefits

  • Enables reliable nonvolatile storage
  • Withstands frequent data logging
  • Retains data for decades without power
  • Eliminates write delays for fast operation
  • Integrates easily with SPI microcontrollers
  • Protects data from accidental writes
  • Minimizes power usage in active mode
  • Extends battery life in standby
  • Operates in standard 3 V systems
  • Reliable in harsh industrial environments
  • Drop-in upgrade for legacy designs
  • Flexible for various SPI configurations

Applications

EV charging

Documents

Documents

Design resources

Partner solutions

Developer community

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