Active and preferred
RoHS Compliant
Lead-free

FM25640B-GTR

Data Sheet
package
ea.
in stock

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FM25640B-GTR
FM25640B-GTR
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25640B-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25640B-GTR is a 64-Kbit (8K × 8) serial F-RAM offering nonvolatile memory with high endurance and fast SPI interface. It supports up to 100 trillion read/write cycles and guarantees 151-year data retention at 65°C. Operating from 4.5 V to 5.5 V over -40 to 85°C, it features NoDelay™ writes, hardware and software write protection, and low power consumption. With up to 20 MHz SPI clock speed, it is ideal for frequent-write industrial and control applications.

Features

  • 64-Kbit ferroelectric RAM, 8K × 8
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, immediate data storage
  • Up to 20 MHz SPI bus frequency
  • Supports SPI mode 0 and mode 3
  • Hardware and software write protection
  • 250 µA active current at 1 MHz
  • 4 µA typical standby current
  • VDD operation: 4.5 V to 5.5 V
  • Input hysteresis for noise immunity
  • Industrial temperature: –40°C to +85°C

Benefits

  • Reliable nonvolatile storage for critical
  • Eliminates write delays, speeds up systems
  • Withstands frequent, rapid data logging
  • Prevents data loss in power interruptions
  • Drop-in replacement for serial EEPROM/flash
  • Low power extends battery and system life
  • Flexible for various SPI host controllers
  • Write protection guards against accidental
  • Operates in harsh industrial environments
  • Noise immunity improves signal reliability
  • Long retention reduces maintenance needs
  • Simple integration with standard SPI

Documents

Documents

Design resources

Partner solutions

Developer community

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