FF4MR12W2M1H_B70
Active and preferred
RoHS Compliant

FF4MR12W2M1H_B70

CoolSiC™ MOSFET half-bridge module 1200 V
Datasheet
package
ea.
in stock

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FF4MR12W2M1H_B70
FF4MR12W2M1H_B70
ea.
Datasheet


Product details

  • Applications
    UPS, Solar, EV Charger, ESS, SST
  • Configuration
    Half-bridge
  • Dimensions (width)
    48 mm
  • Dimensions (length)
    62.8 mm
  • Features
    PressFIT, AlN
  • Housing
    Easy 2B
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    4 mΩ

Recommended
OPN
FF4MR12W2M1HB70BPSA1
Product Status active and preferred
Infineon Package
AG-EASY2B
Package Name N/A
Packing Size 15
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
CN,DE
Country of Diffusion (CoD)
AT,MY
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
AG-EASY2B
Package Name -
Packing Size 15
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
CN,DE
Country of Diffusion (CoD)
AT,MY
ea.
in stock
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 4 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.

Features

  • Best in class with 12.25mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • Enlarged gate drive voltage window
  • Voltage window from 15 to 18 & 0 to -5 V
  • Extended maximum gate-source voltages
  • Gate-source voltages of +23 V and -10 V
  • Tvjop: overload condition up to 175°C
  • Integrated NTC temperature sensor

Benefits

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density
  • Thermal conductivity of DCB material
  • Better thermal conductivity of DCB material
Documents

Design resources

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