FF2000R17T2P8Q
NEW
Active and preferred
RoHS Compliant

FF2000R17T2P8Q

NEW
1700 V, 2000 A half-bridge IGBT module, TIM 2.0

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FF2000R17T2P8Q
FF2000R17T2P8Q


Product details

  • Configuration
    half-bridge
  • Dimensions (length)
    140 mm
  • Dimensions (width)
    99.8 mm
  • Features
    TIM 2.0
  • Housing
    XHP™ 2
  • IC(nom) / IF(nom)
    2000 A
  • IC max
    2000 A
  • Qualification
    Industrial
  • Technology
    IGBT8 - P8
  • VCE(sat) (Tvj=25°C typ)
    1.65 V
  • VCES / VRRM
    1700 V
  • VF (Tvj=25°C typ)
    1.95 V
  • Voltage Class max
    1700 V

Recommended
OPN
FF2000R17T2P8QBPSA1
Product Status active and preferred
Infineon Package AG-XHP2K17
Package Name N/A
Packing Size 4
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
DE
Country of Diffusion (CoD)
DE,MY
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package AG-XHP2K17
Package Name -
Packing Size 4
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
DE
Country of Diffusion (CoD)
DE,MY
XHP™ 2 1700 V, 2000 A half-bridge IGBT module with improved chipset, high power density and improved thermal management, and with pre-applied TIM2.0.

Features

  • symmetrical module design
  • low-inductive housing
  • low gate charge for improved paralleling
  • high performance ceramic
  • cont. operating temperature @Tvj=175°C
  • pre-applied TIM 2.0

Benefits

  • High power density
  • Improved thermal performance
  • Energy efficiency
  • Low switching and conduction losses
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