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×
Active and preferred
RoHS Compliant
DF17MR12W1M1HF_B86
CoolSiC™ MOSFET Module booster 1200 V
ea.
in stock
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DF17MR12W1M1HF_B86
ea.
Product details
-
ApplicationsSolar
-
ConfigurationBooster
-
Dimensions (width)33.8 mm
-
Dimensions (length)62.8 mm
-
FeaturesPressFIT
-
HousingEasy 1B
-
QualificationIndustrial
-
RDS (on) (@ Tj = 25°C)17 mΩ
| Recommended | ||
|
OPN
|
DF17MR12W1M1HFB86BPSA1 | |
| Product Status | active and preferred | |
| Infineon Package | AG-EASY1B | |
| Package Name | N/A | |
| Packing Size | 24 | |
| Packing Type | TRAY | |
| Moisture Level | NA | |
| Moisture Packing | NON DRY | |
| Lead-free | No | |
| Halogen Free | No | |
| RoHS Compliant | Yes | |
| Country of Assembly (CoA) |
DE
|
|
| Country of Diffusion (CoD) |
MY
|
|
|
Infineon stock last updated:
|
ea.
in stock
|
|
|
|
||
|
|
||
| Product Status |
Active
|
|---|---|
| Infineon Package | AG-EASY1B |
| Package Name | - |
| Packing Size | 24 |
| Packing Type | TRAY |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
| Country of Assembly (CoA) |
DE
|
| Country of Diffusion (CoD) |
MY
|
ea.
in stock
EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology.
Features
- Easy family with 12mm height
- enhanced generation 1 trench technology
- Very low module stray inductance
- Gate-source voltages of +23 V and -10 V
- Very low stray inductance
- Overload capabilities up to 175°C
- PressFIT pins
Benefits
- Easy to design
- Highest power density by lowest RDS
- Outstanding module efficiency
- A low FIT rate for cosmic ray induced fails
Applications
Documents
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