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DD1200S45KL3_B5

4500 V, 1200 A diodes IGBT module
ea.
in stock

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DD1200S45KL3_B5
DD1200S45KL3_B5
ea.

Product details

  • Configuration
    Diodes
  • Dimensions (width)
    140 mm
  • Dimensions (length)
    130 mm
  • Features
    10.4kV isolation
  • Housing
    IHV
  • IC(nom) / IF(nom)
    1200 A
  • IC max
    1200 A
  • Qualification
    Industrial, Traction
  • Technology
    Diode
  • VCES / VRRM
    4500 V
  • VF (Tvj=25°C typ)
    2.5 V
  • Voltage Class max
    4500 V
OPN
DD1200S45KL3B5NOSA1
Product Status active
Infineon Package A-IHV130
Package Name N/A
Packing Size 2
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package A-IHV130
Package Name -
Packing Size 2
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IHV 4500 V , 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5 ).

Features

  • High DC stability
  • High surge current capability
  • Extended storage temperature
  • * down to T(stg) = -55°C
  • Package with CTI > 600
  • Package insulation 10.4 kV AC 1min
  • High creepage & clearance distances
  • AlSiC base plate with AlN substrate
  • for increased Thermal cycling
  • Fire & smoke EN45545 R22, R23 : HL3
  • Dual Diode

Benefits

  • Standardized housing: 130x140x48 mm
  • decades of field experience
  • Long service life
  • Tough against overloads & faults
  • Low FIT Rate

Documents

Design resources

Developer community

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