CY7C1061GN30-10ZXIT
Active and preferred
RoHS Compliant
Lead-free

CY7C1061GN30-10ZXIT

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CY7C1061GN30-10ZXIT
CY7C1061GN30-10ZXIT


Product details

  • Density
    16 MBit
  • Family
    FAST SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.2 V to 3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    10 ns

OPN
CY7C1061GN30-10ZXIT
Product Status active and preferred
Infineon Package
Package Name TSOP-I-48 (51-85183)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TSOP-I-48 (51-85183)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW
CY7C1061GN30-10ZXIT is a 16-Mbit (1M × 16) asynchronous CMOS SRAM with 10 ns access time. It operates from 2.2 V to 3.6 V and supports automatic power-down when deselected. The device provides byte writes via BLE/BHE and uses single chip enable control. It is specified up to 100 MHz, with ICC 90 mA typ (110 mA max), and is offered in a Pb-free 48-pin TSOP I package (tape-and-reel), industrial range.

Features

  • 1M words x 16-bit SRAM array
  • 10 ns/15 ns address access (tAA)
  • 10 ns/15 ns read cycle time (tRC)
  • OE access 5 ns/8 ns (tDOE)
  • VCC 2.2 V to 3.6 V operation
  • Data retention down to 1.0 V (VDR)
  • Data retention current 30 mA max
  • ICC 90 mA typ at 100 MHz
  • Auto power-down when deselected
  • TTL-compatible I/O levels
  • Dual chip enables (CE1, CE2)
  • Two byte enables (BLE, BHE)

Benefits

  • 16-bit bus boosts bandwidth
  • 10 ns class reads cut latency
  • Fast OE gives quick bus turn-on
  • 2.2-3.6 V fits common rails
  • 1.0 V retention saves standby power
  • Auto power-down reduces idle draw
  • TTL levels ease logic interfacing
  • CE1/CE2 simplify memory expansion
  • Byte enables support 8-bit writes
  • Low leakage supports low-power idle
  • High-Z outputs prevent bus contention
  • Clear timing specs speed design-in
Documents

Design resources

Developer community