CY62167GN30-45BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62167GN30-45BVXI

Datasheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62167GN30-45BVXI
CY62167GN30-45BVXI
Datasheet


Product details

  • Density
    16 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial

Recommended
OPN
CY62167GN30-45BVXI
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Est. Longevity Date 2033
Launch Date 03/2022
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW
CY62167GN30-45BVXI is a 16-Mbit (1M × 16 or 2M × 8) high-performance CMOS SRAM with 45 ns access. It runs from 2.2 V to 3.6 V over -40°C to +85°C and supports easy expansion using CE1, CE2, and OE plus byte enables (BLE/BHE). Automatic power-down cuts standby to 1.5 µA typical (8 µA max); operating ICC is 29 mA typical at 22.22 MHz. BVXI is a Pb-free 48-ball VFBGA (6 × 8 × 1 mm).

Features

  • 16-Mbit SRAM; 1M×16 or 2M×8
  • 45 ns read cycle time (tRC)
  • 22 ns OE to data valid (tDOE)
  • 2.2 V to 3.6 V supply (VCC)
  • 1.5 µA typ standby current (ISB)
  • 8 µA max standby current (ISB1)
  • 35 mA max ICC at 22.22 MHz
  • 1 V data retention supply (VDR)
  • 8 µA max data retention (ICCDR)
  • Byte enables BHE/BLE for 8-bit
  • High-Z I/O via CE/OE/BHE/BLE
  • ESD >2001 V (MIL-STD-883)

Benefits

  • Flexible 16/8-bit bus interface
  • 45 ns access supports fast CPU
  • 22 ns OE improves read latency
  • 2.2–3.6 V fits 3 V systems
  • 1.5 µA standby extends battery
  • 8 µA max limits sleep power
  • 35 mA max reduces active power
  • Retains data down to 1 V VCC
  • µA retention cuts backup power
  • Byte writes cut write energy
  • High-Z enables easy expansion
  • High ESD improves robustness
Documents

Design resources

Partner solutions

Developer community