CY62167EV30LL-45BVXIT
Active and preferred
RoHS Compliant
Lead-free

CY62167EV30LL-45BVXIT

High-Density 16 MBit MoBL™ Parallel SRAM for Industrial Applications with Wide Temperature Range
Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62167EV30LL-45BVXIT
CY62167EV30LL-45BVXIT
ea.
Data Sheet

Product details

  • Density
    16 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
Recommended
OPN
CY62167EV30LL-45BVXIT
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62167EV30LL-45BVXIT is a 16-Mbit CMOS SRAM organized as 1M × 16 or 2M × 8 with 45 ns access. It operates from 2.2 V to 3.6 V over the Automotive-A range (–40°C to +85°C). Low-power operation includes automatic power-down when deselected, 1.5 µA typical standby (12 µA max), and 2.2 mA typical ICC at 1 MHz. It supports byte enables (BHE/BLE) and is offered in Pb-free 48-ball VFBGA.

Features

  • 16-Mbit SRAM, 1M×16 or 2M×8
  • 45 ns read/write cycle time
  • VCC operating range 2.2 V to 3.6 V
  • Automatic power-down on deselect
  • Standby current 1.5 µA typ
  • Active current 2.2 mA at 1 MHz typ
  • Data retention at VCC down to 1.5 V
  • ICCDR 10 µA max at VCC=1.5–3.0 V
  • OE/CE/BHE/BLE tri-state control
  • Input/output leakage ±1 µA max

Benefits

  • Fits 16-bit or 8-bit bus designs
  • 45 ns access supports fast reads
  • 2.2–3.6 V suits 3.3 V systems
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current reduces heat
  • Retains data during VCC droop
  • 10 µA retention enables backup
  • Tri-state eases bus sharing/expand
  • Low leakage improves low-power IO
Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }