CY62148ELL-45ZSXI
Active and preferred
RoHS Compliant
Lead-free

CY62148ELL-45ZSXI

Datasheet
package
ea.
in stock

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CY62148ELL-45ZSXI
CY62148ELL-45ZSXI
ea.
Datasheet

Product details

  • Density
    4 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    512K x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Industrial
  • Speed
    45 ns
Recommended
OPN
CY62148ELL-45ZSXI
Product Status active and preferred
Infineon Package
PG-TSOP-32
Package Name TSOP-II-32 (51-85095)
Packing Size 1170
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-32
Package Name TSOP-II-32 (51-85095)
Packing Size 1170
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62148ELL-45ZSXI is a 4-Mbit (512K × 8) CMOS static RAM in a 32-pin TSOP II (Pb-free) package for 5 V systems. It operates from 4.5 V to 5.5 V over –40°C to +85°C and delivers 45 ns access for processor memory expansion. CE-driven automatic power-down cuts standby current to 2.5 µA typical (7 µA max). Active current is 3.5 mA typical at 1 MHz and 15 mA typical at fmax, with TTL input levels.

Features

  • 4-Mbit (512K × 8) CMOS SRAM
  • 45 ns read cycle time (tRC)
  • 4.5 V to 5.5 V supply (VCC)
  • Automatic power-down (CE HIGH)
  • Standby current 2.5 µA typ
  • Standby current 7 µA max
  • Active current 3.5 mA typ @1 MHz
  • Data retention at VCC ≥2.0 V (VDR)
  • Data retention current 8.8 µA max
  • OE/CE/WE control read/write
  • 10 pF max CIN, 10 pF max COUT

Benefits

  • Fast SRAM reads for quick response
  • Works with 5 V logic supplies
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current reduces heat
  • Retains data with 2 V backup rail
  • Low ICCDR suits always-on memory
  • Simple CE/OE enables expansion
  • High-Z outputs ease bus sharing
  • Low pin capacitance supports speed
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