CY62137FV18LL-55BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62137FV18LL-55BVXI

Datasheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62137FV18LL-55BVXI
CY62137FV18LL-55BVXI
ea.
Datasheet


Product details

  • Density
    2 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.65 V to 2.25 V
  • Organization (X x Y)
    128K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Industrial

Recommended
OPN
CY62137FV18LL-55BVXI
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62137FV18LL-55BVXI is a 2-Mbit (128K × 16) high-performance CMOS SRAM for portable, battery-powered designs. It operates from 1.65 V to 2.25 V over -40°C to +85°C and delivers 55 ns access time. Automatic power-down reduces current when addresses are not toggling, and standby is 1 µA typical (5 µA max). Typical active current is 1.6 mA at 1 MHz. It is supplied in a Pb-free 48-ball VFBGA package.

Features

  • 128K × 16 CMOS static RAM
  • 55 ns read cycle time (tRC)
  • 45 ns write cycle time (tWC)
  • 1.65 V to 2.25 V VCC range
  • 1 µA typ standby current (ISB)
  • 5 µA max standby current (ISB)
  • 1.6 mA typ ICC at 1 MHz
  • Auto power-down when deselected
  • BLE/BHE byte enables for 8-bit
  • Tri-state I/O with OE control

Benefits

  • 16-bit bus cuts access cycles
  • 55 ns access supports fast MCU
  • 45 ns write boosts throughput
  • Fits low-voltage 1.8 V rails
  • 1 µA standby extends battery life
  • 5 µA max eases sleep budgeting
  • Low active ICC reduces heat
  • Auto power-down saves energy
  • Byte writes cut bus switching power
  • Tri-state bus enables easy expansion

Applications

Documents

Design resources

Partner solutions

Developer community