CY62136FV30LL-45ZSXIT
Active and preferred
RoHS Compliant
Lead-free

CY62136FV30LL-45ZSXIT

Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62136FV30LL-45ZSXIT
CY62136FV30LL-45ZSXIT
ea.
Data Sheet

Product details

  • Density
    2 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    128K x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns
Recommended
OPN
CY62136FV30LL-45ZSXIT
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62136FV30LL-45ZSXIT is a 2-Mbit (128K × 16) CMOS static RAM with a 45 ns speed grade and automatic power-down to cut standby current when CE is deselected. It operates from 2.2 V to 3.6 V and supports Industrial/Automotive-A temperature range of –40°C to +85°C. The device is available in a Pb-free 44-pin TSOP II (ZS) package for low-power portable and embedded memory expansion.

Features

  • 2-Mbit SRAM, 128K × 16
  • 45 ns read/write cycle time
  • OE access time down to 22 ns
  • Supply voltage 2.2 V to 3.6 V
  • ICC typ 1.6 mA at 1 MHz
  • ICC max 18 mA at fmax
  • Standby current typ 1 µA
  • Auto power-down with CE HIGH
  • Byte write enables BLE/BHE
  • Outputs go high-Z when disabled
  • Input/output leakage ±1 µA
  • CIN/COUT max 10 pF

Benefits

  • Fits 16-bit data SRAM needs
  • Fast reads/writes reduce latency
  • Faster OE speeds async reads
  • Runs from 2.2–3.6 V rails
  • Low active current saves energy
  • Handles high-frequency accesses
  • Extends battery life in standby
  • Cuts idle power when inactive
  • Updates 8-bit bytes, less traffic
  • Simplifies bus sharing
  • Low leakage improves data hold
  • Low pin capacitance eases timing

Applications

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }