CY62128EV30LL-45ZAXI
Active and preferred
RoHS Compliant
Lead-free

CY62128EV30LL-45ZAXI

Datasheet
package
ea.
in stock

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CY62128EV30LL-45ZAXI
CY62128EV30LL-45ZAXI
ea.
Datasheet


Product details

  • Density
    1 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    128K x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns

Recommended
OPN
CY62128EV30LL-45ZAXI
Product Status active and preferred
Infineon Package
PG-TSOP-32
Package Name STSOP-32 (51-85094)
Packing Size 2340
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-32
Package Name STSOP-32 (51-85094)
Packing Size 2340
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
ea.
in stock
CY62128EV30LL-45ZAXI is a 1-Mbit (128K × 8) CMOS asynchronous SRAM for battery-powered and embedded designs. It runs from 2.2 V to 3.6 V over -40°C to +85°C with 45 ns access time. At VCC max and f = 1 MHz, ICC is 1.3 mA typ (2.0 mA max), and standby is 1 µA typ (4 µA max) using automatic CE power-down when deselected. Outputs go high-Z when deselected. The -45ZAXI option is Pb-free 32-pin STSOP.

Features

  • 1-Mbit SRAM organized as 128K × 8
  • 45 ns read/write cycle time
  • 2.2 V to 3.6 V single-supply VCC
  • Automatic CE power-down (ISB1/2)
  • Standby current 1 µA typ, 4 µA max
  • Active current 1.3 mA typ at 1 MHz
  • Data retention at VCC = 1.5 V (VDR)
  • Data retention current 3 µA max
  • OE/WE tri-state control of I/O bus
  • 10 pF max input/output capacitance
  • ESD > 2001 V (MIL-STD-883 3015)
  • -40°C to +85°C operating ambient

Benefits

  • Fits small code/data storage needs
  • 45 ns enables fast memory accesses
  • 2.2–3.6 V works with 3 V rails
  • Power-down cuts idle consumption
  • µA standby extends battery life
  • Low active current reduces power
  • Retains data in backup mode
  • 3 µA max eases keepalive design
  • Tri-state bus simplifies expansion
  • Low capacitance helps signal integrity
  • ESD robustness reduces field fails
  • -40°C to +85°C boosts reliability

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