Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
CY2309NZSXI-1H
END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY2309NZSXI-1H

END OF LIFE

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CY2309NZSXI-1H
CY2309NZSXI-1H


Product details

  • Category
    Non Zero Delay Buffers
  • Core/IO Operating Voltages ((V))
    3.3
  • Features
    3.3V Non Zero Delay Buffer
  • Function
    See datasheet
  • I/O Voltage ((V))
    3.3
  • Input Frequency range
    0 MHz to 133 MHz
  • Input Type
    LVCMOS/LVTTL
  • Lead Ball Finish
    Pure Sn
  • On-chip Clock Generation (PLL)
    0
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    3 V to 3.6 V
  • Output Frequency range
    0 MHz to 133 MHz
  • Output Signal Type
    LVCMOS
  • Outputs
    9
  • Peak Reflow Temp
    260 °C
  • Publish in NPSG
    N
  • Publish in PSG
    Y
  • Qualification
    Industrial
  • Spread Spectrum
    N

OPN
CY2309NZSXI-1H
Product Status discontinued
Infineon Package
Package Name SOIC-16 (51-85068)
Packing Size 960
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes

Product Status discontinued
Infineon Package
Package Name SOIC-16 (51-85068)
Packing Size 960
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY2309NZSXI-1 H is a nine-output non zero delay buffer for industrial clock distribution. It operates from 3.0 to 3.6 V with 3.3 V I/O, supports input and output frequencies up to 133 MHz, and features LVCMOS/LVTTL input and LVCMOS output. The device offers less than 1 ns input-output delay, under 250 ps output skew, low power under 32 mA at 66.6 MHz, and operates from -40 to 85°C. RoHS compliant, 16-pin SOIC package.

Features

  • One-input to nine-output buffer
  • Drives up to four SO-DIMMs
  • Low power: <32 mA at 66.6 MHz
  • Supports 2–133.33 MHz frequencies
  • Output-output skew <250 ps
  • Input-output delay 1 ns
  • Multiple VDD/VSS pins for noise/EMI
  • Output rise/fall time ≤1.5 ns
  • Power-up time 0.05–50 ms
  • Thermal resistance 111°C/W (JA)
  • ESD protection >2,000 V

Benefits

  • Enables reliable clock distribution
  • Supports high-density memory systems
  • Extends battery life in mobile devices
  • Flexible for various clock speeds
  • Ensures precise signal timing
  • Fast signal propagation reduces latency
  • Reduces system noise and EMI
  • Fast transitions for sharp signals
  • Quick system power-up
  • Handles thermal stress efficiently
  • Protects against ESD damage

Applications

Documents

Design resources

Developer community