Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY15B128J-SXAT

END OF LIFE
Data Sheet
package
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CY15B128J-SXAT
CY15B128J-SXAT
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Data Sheet

Product details

  • Density
    128 kBit
  • Frequency
    3.4 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Organization (X x Y)
    16Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive
  • Speed
    0 ns
OPN
CY15B128J-SXAT
Product Status discontinued
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
View replacement
The CY15B128J-SXAT is a 128-Kbit (16K × 8) automotive serial F-RAM with high-endurance ferroelectric technology, supporting 100 trillion read/write cycles and 151-year data retention at 65°C. It operates from 2.0 V to 3.6 V, with active current up to 175 μA at 100 kHz and 8 μA in sleep mode.

Features

  • 128-Kbit F-RAM organized as 16K × 8
  • 100 trillion (10¹⁴) read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ writes, RAM-like speed
  • Fast I2C interface up to 3.4 MHz
  • Low active current: 175 μA at 100 kHz
  • 8 μA sleep mode current
  • Wide VDD: 2.0 V to 3.6 V
  • Operating temp: –40°C to +85°C
  • Device and manufacturer ID
  • Direct hardware replacement for EEPROM
  • Supports legacy I2C timings (100/400 kHz)

Benefits

  • Enables frequent, instant data logging
  • Eliminates write delays, boosts system speed
  • 10¹⁴ cycles for maintenance-free operation
  • 151-year retention prevents data loss
  • Reduces power in active and sleep modes
  • Wide VDD simplifies power design
  • Operates reliably from –40°C to +85°C
  • Drop-in replacement for serial EEPROM
  • Supports legacy and new I2C designs
  • Device ID enables easy inventory tracking
  • No data polling needed after writes
  • Low power extends battery/system life

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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