not for new design
RoHS Compliant
Lead-free

CY15B104Q-SXI

High-Density 4 Mbit SPI F-RAM with Industrial Qualification and Wide Operating Range
Data Sheet
package
ea.
in stock

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CY15B104Q-SXI
CY15B104Q-SXI
ea.
Data Sheet

Product details

  • Density
    4096 kBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage (VCCQ)
    2 V to 3.6 V
  • Operating Voltage
    2 V to 3.6 V
  • Organization (X x Y)
    512Kb x 8
  • Peak Reflow Temp
    260 °C
  • Currently planned availability until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
OPN
CY15B104Q-SXI
Product Status not for new design
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CY15B104Q-SXI, a 4-Mbit F-RAM, ensures 151-year data retention, rapid bus-speed write operations, and exceptional write endurance. It serves as a reliable solution for nonvolatile memory applications, outperforming traditional serial flash and EEPROM.

Features

  • 4-Mbit F-RAM logically organized as 512 K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention 
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Manufacturer ID and Product ID
  • Low power consumption
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85 °C

Documents

Documents

Design resources

Partner solutions

Developer community

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