Active and preferred
RoHS Compliant
Lead-free

CY15B104Q-LHXI

High-Density 4 Mbit SPI Nonvolatile Memory with Industrial Qualification and Wide Operating Range
Data Sheet
package
ea.
in stock

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CY15B104Q-LHXI
CY15B104Q-LHXI
ea.
Data Sheet

Product details

  • Density
    4 MBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage (VCCQ)
    2 V to 3.6 V
  • Operating Voltage
    2 V to 3.6 V
  • Organization (X x Y)
    512Kb x 8
  • Peak Reflow Temp
    260 °C
  • Currently planned availability until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
CY15B104Q-LHXI
Product Status active and preferred
Infineon Package
PG-USON-8
Package Name DFN-8 (001-85579)
Packing Size 370
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-USON-8
Package Name DFN-8 (001-85579)
Packing Size 370
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CY15B104Q-LHXI is a 4 Mbit F-RAM, offering 151-year data retention, rapid bus-speed write operations, and substantial write endurance, making it ideal for nonvolatile memory applications. It provides reliable, high-speed performance, and significant benefits as a hardware replacement for serial EEPROM or flash.

Features

  • 4 Mbit F-RAM logically organized as 512 K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Up to 40 MHz frequency
  • Sophisticated write protection scheme
  • Manufacturer ID and Product ID
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40°C to +85°C

Documents

Documents

Design resources

Partner solutions

Developer community

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