CY15B064Q-SXE
Active and preferred
RoHS Compliant

CY15B064Q-SXE

High-Density 64kBit SPI FRAM Module | 16MHz, -40 to 125°C, Pure Sn Finish
Data Sheet
package
ea.
in stock

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CY15B064Q-SXE
CY15B064Q-SXE
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    3 V to 3.6 V
  • Operating Voltage range
    3 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns
Recommended
OPN
CY15B064Q-SXE
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 970
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 970
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CY15B064Q-SXE is a 64-Kbit (8K × 8) automotive-grade serial F-RAM with high-endurance nonvolatile memory and a fast SPI interface up to 16 MHz. It supports 10 trillion (10¹³) read/write cycles, 121-year data retention at 85°C, and operates from 3.0 V to 3.6 V over a -40°C to +125°C range.

Features

  • 64-Kbit F-RAM organized as 8K × 8
  • 10 trillion (10¹³) read/write endurance
  • 121-year data retention at 85°C
  • NoDelay™ writes at bus speed
  • SPI interface up to 16 MHz
  • Hardware and software write protection
  • 300 μA active current at 1 MHz
  • 6 μA standby current at 85°C
  • 3.0 V to 3.6 V supply voltage
  • –40°C to +125°C operating range
  • Input hysteresis on CS and SCK pins
  • Output data valid time max 25 ns

Benefits

  • Reliable data even after 10¹³ cycles
  • 121-year retention prevents data loss
  • Instant writes speed up system response
  • SPI up to 16 MHz enables fast transfers
  • Write protection enhances data security
  • Low active current reduces power use
  • 6 μA standby extends battery life
  • Operates in harsh temperature ranges
  • Stable operation with input hysteresis
  • Fast output data for quick access
Documents

Design resources

Partner solutions

Developer community

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