Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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CY15B064J-SXA
END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY15B064J-SXA

END OF LIFE
Datasheet
package
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CY15B064J-SXA
CY15B064J-SXA
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Datasheet


Product details

  • Density
    64 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.65 V
  • Operating Voltage range
    3 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    0 ns

OPN
CY15B064J-SXA
Product Status discontinued
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 970
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
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Product Status discontinued
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 970
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
View replacement
The CY15B064J-SXA is a 64-Kbit (8K × 8) automotive-grade serial F-RAM with I2C interface, delivering 100 trillion (1e14) read/write cycles and 151-year data retention at 65°C. Operating from 2.7 V to 3.65 V and -40°C to +85°C, it features low active current (100 μA at 100 kHz) and standby current (3 μA typ). With fast NoDelay™ writes and high reliability, it is ideal for automotive and industrial applications requiring frequent or rapid writes.

Features

  • 64-Kbit nonvolatile F-RAM, 8K × 8
  • 100 trillion read/write cycle endurance
  • 151-year data retention at 65°C
  • NoDelay™ instant write technology
  • I2C interface up to 1 MHz
  • Low active current: 100 μA at 100 kHz
  • Low standby current: 3 μA typical
  • Wide VDD: 2.7 V to 3.65 V
  • Operating temp: –40°C to +85°C
  • Write protection pin (WP)
  • Schmitt trigger inputs for noise immunity
  • ESD protection: 2 kV HBM, 500 V CDM

Benefits

  • Reliable data even with frequent writes
  • 151-year retention ensures long-term storage
  • No write delays, faster system response
  • Drop-in replacement for serial EEPROM
  • Low power extends battery life
  • Wide voltage range supports flexible design
  • Operates in harsh automotive temps
  • Write protection prevents accidental writes
  • Noise-immune inputs for robust operation
  • Withstands ESD for improved durability

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