Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant

CY14E116L-ZS25XI

END OF LIFE
Data Sheet
package

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CY14E116L-ZS25XI
CY14E116L-ZS25XI
Data Sheet

Product details

  • Density
    16384 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    2Mb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    25 ns
OPN
CY14E116L-ZS25XI
Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY14E116L-ZS25XI is a 16-Mbit nvSRAM (2048K × 8) that combines fast SRAM with QuantumTrap nonvolatile storage in each cell. It runs from 4.5 V to 5.5 V and performs hands-off AutoStore on power-down using an external VCAP capacitor (19.8–82.0 µF), with RECALL on power-up or by software. Industrial -40 to 85°C, 25 ns access, 44-pin TSOP II, with 1M STORE cycles and 20-year retention.

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Benefits

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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