CY14B256LA-SZ45XI

High-Density 256 kBit Parallel SRAM for Industrial Applications with Wide Temperature Range

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CY14B256LA-SZ45XI
CY14B256LA-SZ45XI

Product details

  • Density
    256 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CY14B256LA-SZ45XI is a 256-Kbit (32 K × 8) parallel nvSRAM that combines fast SRAM with QuantumTrap nonvolatile cells for instant, nonvolatile data backup. It operates from a single 2.7 V to 3.6 V supply over -40°C to 85°C and uses AutoStore with a 61 µF to 180 µF VCAP capacitor to STORE on power-down and RECALL on power-up. SZ45XI is 45 ns in a 32-pin SOIC, with 20-year retention and 1 million STORE cycles.

Features

  • 32 K × 8 parallel SRAM interface
  • QuantumTrap nonvolatile per cell
  • AutoStore on power-down via VCAP
  • STORE via HSB pin control
  • STORE/RECALL via 6-read sequence
  • Parallel STORE/RECALL of all cells
  • 2.7 V to 3.6 V single-supply
  • 1,000 K nonvolatile STORE cycles
  • 20-year data retention
  • Infinite SRAM read/write cycles
  • Standby current max 5 mA
  • Input leakage ±1 µA (non-HSB)

Benefits

  • Keeps data on power loss automatically
  • No battery needed for data backup
  • Simple parallel bus like SRAM
  • Flexible STORE control options
  • Software-only backup/restore control
  • Fast recovery after power returns
  • Works from common 3 V rails
  • Long-lived logging of key data
  • Retains configuration for 20 years
  • Unlimited runtime SRAM updates
  • Cuts idle power in standby modes
  • Reduces leakage-sensitive designs

Applications

Documents

Design resources

Developer community

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