Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
CY14B116N-BA25XIT
END OF LIFE
discontinued
RoHS Compliant

CY14B116N-BA25XIT

END OF LIFE
Datasheet
package

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CY14B116N-BA25XIT
CY14B116N-BA25XIT
Datasheet


Product details

  • Density
    16 MBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    1Mb x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2031
  • Qualification
    Industrial
  • Speed
    25 ns

OPN
CY14B116N-BA25XIT
Product Status discontinued
Infineon Package
PG-TFBGA-60
Package Name FBGA-60 (002-00193)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US

Product Status discontinued
Infineon Package
PG-TFBGA-60
Package Name FBGA-60 (002-00193)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
CY14B116N-BA25XIT is a 16-Mbit nvSRAM (1024K × 16) combining fast SRAM with QuantumTrap nonvolatile storage. It supports 2.7 V to 3.6 V supply over –40°C to +85°C and 25-ns access in a 60-ball FBGA. Data is AutoStored on power-down using a VCAP capacitor and Recalled on power-up; STORE/RECALL can also be pin- or software-controlled. Endurance is 1M STORE cycles and 20-year retention.

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Benefits

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

Applications

Documents

Design resources

Partner solutions

Developer community